Laboratoire Léon Brillouin

UMR12 CEA-CNRS

Bât. 563 CEA Saclay

91191 Gif sur Yvette Cedex

France

llb-sec@cea.fr

Control of roughness at interfaces and the impact on charge mobility in all-polymer field-effect transistors.
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Schematic diagram of a bottom gate, top contact FET.

Using conjugated polymers as the active materials in electronic and optoelectronic devices opens up the possibility of fabricating all-polymer devices using solution processing technologies. The fabrication of good quality field-effect transistors (FETs) is crucial to a number of polymer-based devices, such as active matrix displays and integrated circuits. Central to FET operation is the dielectric/semiconductor interface. Here we look at the interface between a polymer gate dielectric and a conjugated polymer, using neutron reflectivity. By using a mixed solvent (toluene/cyclohexane) to deposit the conjugated polymer directly on top of the polymer dielectric we are able to fabricate bilayer FET architectures with systematically controlled interfacial roughness, and study the impact on transistor performance. More...

 

Maj : 30/08/2010 (1595)

 

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